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2D-based photodetector with fast photoresponse

New device uses ternary telluride InSiTe3 with trigonal symmetry and a layered structure

13.06.2022 - Experiments show short reaction time within 545 to 576 nanoseconds.

Recently, a collaborated team led by Li Liang and Li Guanghai at the Institute of Solid State Physics (ISSP), Hefei Institutes of Physical Science together with Yan Feng from Hong Kong Poly­technic University (PolyU) developed a new 2D-based photo­detector, featuring on ultrafast photo­response and broadband detection capabilities. The photo­detector was made from layered ternary telluride InSiTe3.

Photodetectors with broadband detection capabilities play a crucial role in our daily lives and have been extensively used in a wide range of appli­cations. Many 2D materials-based photo­detectors exhibit high photo­responsivity and detectivity but slow response speed, which can be attributed to their prolonged excess carrier lifetime. Such slow speed performance has become a bottleneck for 2D materials-based photo­detectors in practical applications, especially optical communication. “We found the response of this InSiTe3-based photo­detector stable and reversible.” said Li Liang.

In their experiment, the photons responded within 545 to 576 nanoseconds, and the detection capa­bilities from the ultraviolet (UV) to the near-infrared (NIR) optical communi­cation region ranged from 365 to 1310 nanometers. The promising photo­detector is based on ternary telluride InSiTe3 with trigonal symmetry and a layered structure. Scientists synthesized high-quality InSiTe3 crystals and deter­mined its Raman vibration modes by Raman spectra measurements.

They found that the indirect band gap of InSiTe3 can be tuned from 1.30 eV (monolayer) to 0.78 eV (bulk). Moreover, the InSiTe3-based photo­detectors exhibit the detec­tivity of 7.59 × 109 Jones. These outstanding performance values highlight the potential of 2D InSiTe3-based photo­detectors in high-speed broadband photo­detection. (Source: HFIPS)

Reference: J. Chen et al.: A Submicrosecond-Response Ultraviolet–Visible–Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe3, ACS Nano 16, 7745 (2022); DOI: 10.1021/acsnano.1c11628

Link: Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, China

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